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US 12,757,727 B2Granted
Inductor structures integrated in semiconductor devices
AssigneeGlobalFoundries U.S. Inc.
InventorsVaruna Ananthapadmanabha Baipadi, Muhammed Shafi Kunnathodi, Venkata Narayana Rao Vanukuru
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Abstract
The disclosed subject matter relates generally to inductor structures integrated in semiconductor devices. More particularly, the present disclosure relates to a semiconductor device having a semiconductor chip, a redistribution layer on the semiconductor chip, and an inductor structure having an upper section in the redistribution layer and a lower section in the semiconductor chip. The upper section and the lower section are concentric about a center region of the inductor structure. The lower section is connected to the upper section.
Claims20
A semiconductor device comprising:
- a semiconductor chip;
- a redistribution layer on the semiconductor chip;
- and
- an inductor structure having a center region, an upper section in the redistribution layer, and a lower section in the semiconductor chip, the upper section and the lower section are concentric about the center region, the lower section is connected to the upper section,
- the upper section comprising an outer portion having a concentric turn about the center region and an inner portion having a concentric turn about the center region,
- the lower section comprising a concentric turn about the center region,
- wherein the concentric turn in the inner portion of the upper section of the inductor structure has a smaller perimeter than the concentric turn in the lower section of the inductor structure and the concentric turn in the inner portion of the upper section of the inductor structure does not overlap with the concentric turn in the lower section of the inductor structure.
4 more elements
A semiconductor device comprising:
- a semiconductor chip;
- a redistribution layer on the semiconductor chip;
- and
- an inductor structure having a center region, an upper section in the redistribution layer, and a lower section in the semiconductor chip, the upper section and the lower section are concentric about the center region,
- the upper section comprising an outer portion having at least one concentric turn about the center region and an inner portion having at least one concentric turn about the center region, the at least one concentric turn in the inner portion having an outermost concentric turn,
- the lower section comprising a plurality of spiral levels, each spiral level includes at least one concentric turn about the center region, the plurality of spiral levels has an uppermost spiral level being connected to the upper section of the inductor structure, the uppermost spiral level having an innermost concentric turn,
- wherein the outermost concentric turn in the inner portion of the upper section of the inductor structure has a smaller perimeter than the innermost concentric turn in the uppermost spiral level of the lower section of the inductor structure and the outermost concentric turn in the inner portion of the upper section of the inductor structure does not overlap with the innermost concentric turn in the uppermost spiral level of the lower section of the inductor structure.
4 more elements
A semiconductor device comprising:
- a semiconductor chip;
- a redistribution layer on the semiconductor chip;
- and
- an inductor structure having a center region, an upper section in the redistribution layer, and a lower section in the semiconductor chip, the upper section and the lower section are concentric about the center region,
- the upper section comprising an outer portion having at least one concentric turn about the center region and an inner portion having at least one concentric turn about the center region, the at least one concentric turn in the inner portion having an outermost concentric turn,
- the lower section comprising a plurality of spiral levels, each spiral level includes at least one concentric turn about the center region, the plurality of spiral levels has an uppermost spiral level being connected to the upper section of the inductor structure, the uppermost spiral level has an innermost concentric turn,
- wherein the lower section of the inductor structure is between the outer portion of the upper section of the inductor structure and the inner portion of the upper section of the inductor structure, and the at least one concentric turn in the inner portion of the upper section of the inductor structure do not overlap with the plurality of spiral levels in the lower section of the inductor structure.
4 more elements
Dependencies are inferred from the claim text.