Semiconductor device and semiconductor device fabrication method
AssigneeLapis Semiconductor Co., Ltd.
InventorMasanori Shindo
Life of this patent
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Abstract
There is provided a semiconductor device including: a circuit region formed on a semiconductor substrate; a first insulating film covering at least a portion of a region on the semiconductor substrate that includes an upper portion of the circuit region; redistribution wiring disposed on the first insulating film; a coil formed by the redistribution wiring on the first insulating film, the coil being connected to the circuit region; a first soft magnetic material film disposed in an aperture portion of the first insulating film, the aperture portion being provided at a lower portion of the coil; and a second soft magnetic material film that is disposed on the first soft magnetic material film, the second soft magnetic material film covering at least a portion of the coil.
Claims9
A semiconductor device comprising:
- a semiconductor substrate including a circuit region;
- a first insulating film covering at least a portion of the circuit region of the semiconductor substrate, the first insulating film including a first aperture extending therethrough and aligned over a first predetermined surface region of the substrate;
- redistribution wiring disposed on the first insulating film;
- a coil formed by the redistribution wiring on the first insulating film, the coil being connected to the circuit region and located over the first predetermined surface region of the substrate;
- a first soft magnetic material film disposed over the first predetermined surface region of the substrate at least partially in the first aperture of the first insulating film, the first soft magnetic film located between the substrate and the coil;
- and
- a second insulating film covering at least a portion of the first insulating film, the second insulating film including a second aperture at least partially overlapping the first aperture of the first insulating film in a plane view;
- a second soft magnetic material film that is disposed directly on the first soft magnetic material film over the second aperture in the second insulating film, the second soft magnetic material film covering at least a portion of the coil,
- wherein a thickness of the first soft magnetic material film in a direction perpendicular to a principal surface of the substrate is the same as a combined thickness of the first and second insulating films in the direction perpendicular to the principal surface of the substrate.
A semiconductor device comprising:
- a semiconductor substrate including a circuit region;
- a first insulating film covering at least a portion of the circuit region of the semiconductor substrate, the first insulating film including a first aperture extending therethrough and aligned over a first predetermined surface region of the substrate;
- redistribution wiring disposed on the first insulating film;
- a coil formed by the redistribution wiring on the first insulating film, the coil being connected to the circuit region and located over the first predetermined surface region of the substrate;
- a first soft magnetic material film disposed over the first predetermined surface region of the substrate at least partially in the first aperture of the first insulating film, the first soft magnetic film located between the substrate and the coil;
- and
- a second insulating film covering at least a portion of the first insulating film, the second insulating film including a second aperture at least partially overlapping the first aperture of the first insulating film in a plane view;
- a second soft magnetic material film that is disposed directly on the first soft magnetic material film over the second aperture in the second insulating film, the second soft magnetic material film covering at least a portion of the coil,
- wherein the first soft magnetic material film completely fills the first and second apertures of the respective first and second insulating films.
A method for fabricating a semiconductor device, the method comprising:
- forming a circuit region on a semiconductor substrate;
- forming a first insulating film in a region that includes an upper portion of the circuit region and excludes a first predetermined region;
- forming a first soft magnetic material film inside the first predetermined region;
- forming a coil at an upper portion of the first soft magnetic material film, the coil being connected to the circuit region;
- forming a second insulating film in a region of an upper portion of the first insulating film, the region excluding a second predetermined region that overlaps with at least a portion of the first predetermined region in a plan view;
- and
- forming a second soft magnetic material film inside the second predetermined region.
Dependencies are inferred from the claim text.