Memory and fabrication method thereof and memory system

A memory system, comprising:

• a memory device;
• and
• a controller coupled to the memory device and configured to control the memory device to store data, wherein the memory device comprises:
• a plurality of semiconductor bodies spaced apart from each other and extending along a first direction;
• spacing portions between adjacent semiconductor bodies;
• conductive connection portions connected to the semiconductor bodies along the first direction;
• and
• spacer portions disposed on sides of the spacing portions along the first direction and disposed around the conductive connection portions,
• wherein:
• widths of first ends of the spacing portions closer to the spacer portions, measured along a second direction perpendicular to the first direction, are smaller than widths of second ends of the spacing portions away from the spacer portions, and the conductive connection portions and the spacing portions overlap along the second direction;
• and
• the spacing portions comprise gates arranged between the first ends of the spacing portions and the second ends of the spacing portions.