Method of manufacturing a vertical semiconductor memory device using metal mask layers

A method for manufacturing a semiconductor device, comprising:

• forming a mask material on a to-be-processed film above an underlying film, the mask material containing a first metal and comprising a first mask layer and a second mask layer, the first mask layer is disposed on the to-be-processed film, the first mask layer having a content of the first metal lower than a first predetermined percentage, the second mask layer disposed on the first mask layer, the second mask layer having a content of the first metal equal to or higher than the first predetermined percentage;
• patterning the mask material;
• and
• processing the to-be-processed film using the mask material as a mask,
• wherein the processing the to-be-processed film comprises performing a first treatment to process the to-be-processed film at a first temperature in an atmosphere of a first gas, and performing a second treatment to process the to-be-processed film at a second temperature higher than the first temperature in an atmosphere of a second gas different from the first gas, and
• the first temperature is not more than 0° C., and the second temperature is more than 0° C.

A method for manufacturing a semiconductor device, comprising:

• forming a mask material on a to-be-processed film above an underlying film, the mask material containing a first metal and comprising a first mask layer and a second mask layer, the first mask layer is disposed on the to-be-processed film, the first mask layer having a content of the first metal lower than a first predetermined percentage, the second mask layer disposed on the first mask layer, the second mask layer having a content of the first metal equal to or higher than the first predetermined percentage;
• patterning the mask material;
• and
• processing the to-be-processed film using the mask material as a mask,
• wherein the processing the to-be-processed film comprises performing a first treatment to process the to-be-processed film at a first temperature in an atmosphere of a first gas, and performing a second treatment to process the to-be-processed film at a second temperature higher than the first temperature in an atmosphere of a second gas different from the first gas, and
• the first gas contains hydrogen (H2) at a higher concentration than the hydrogen concentration of the second gas.