Mitigation of capillary pattern collapse in supercritical dry

A method of wafer processing, the method comprising:

• loading a wafer into a processing chamber, the wafer having a top surface coated with a solvent film, the solvent film comprising a first solvent and a second solvent, the first solvent having a concentration of 50 wt. % or more and less than 100 wt. % relative to a total mass of the solvent film, the second solvent having a concentration of more than 0 wt. % and 50 wt. % or less relative to the total mass of the solvent film, the second solvent having a higher vapor pressure and a lower surface tension than the first solvent;
• supplying a processing fluid into the processing chamber so that the processing fluid is a supercritical fluid in the processing chamber and the first solvent and the second solvent dissolve in the supercritical fluid to form a supercritical mixture, which removes the first solvent and the second solvent from the top surface of the wafer;
• and
• discharging the supercritical mixture from the processing chamber.