Manufacturing method for a semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorDing-Kang Shih
Life of this patent
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Abstract
A manufacturing method includes the following steps: forming a semiconductor structure, wherein the semiconductor structure comprises a wafer, a plurality of dummy gates and a dielectric layer, and the dummy gates are formed on the wafer, and the dielectric layer is formed on the dummy gates; forming an epitaxy layer between adjacent two of the dummy gates, wherein there is a nodule remained on the dielectric layer in process of forming the epitaxy layer; and removing the nodule by using an ultrashort laser beam.
Claims20
A manufacturing method, comprising:
- forming a semiconductor structure, wherein the semiconductor structure comprises a wafer, a plurality of dummy gates and a dielectric layer, and the dummy gates are formed on the wafer, and the dielectric layer is formed on the dummy gates;
- forming an epitaxy layer between adjacent two of the dummy gates, wherein there is a nodule remained on the dielectric layer in process of forming the epitaxy layer;
- and
- removing the nodule by using an ultrashort laser beam.
A manufacturing method, comprising:
- forming a semiconductor structure, wherein the semiconductor structure comprises a wafer, a plurality of dummy gates and a dielectric layer, and the dummy gates are formed on the wafer, and the dielectric layer is formed on the dummy gates;
- forming an epitaxy layer between adjacent two of the dummy gates, wherein there is a nodule remained on the dielectric layer in process of forming the epitaxy layer;
- and
- removing the nodule by using a laser beam, wherein the laser beam is applied to the nodule in a pulse duration, and the pulse duration is less than 100 picoseconds.
A manufacturing method, comprising:
- forming a semiconductor structure, wherein the semiconductor structure comprises a wafer, a plurality of dummy gates and a dielectric layer, and the dummy gates are formed on the wafer, and the dielectric layer is formed on the dummy gates;
- forming an epitaxy layer between adjacent two of the dummy gates, wherein there is a nodule remained on the dielectric layer in process of forming the epitaxy layer;
- and
- removing the nodule by using a laser beam, wherein a removed portion of the nodule raises to a peak temperature at a time point, and a lattice temperature of the nodule is lower than an electron temperature of the nodule at the time point.
Dependencies are inferred from the claim text.