Word-line-pickup structure and method for forming the same

A memory device, comprising:

• a plurality of first-word-lines, wherein from a top view of the memory device, each first-word-line has a first portion, a second portion, and a third portion;
• a plurality of second-word-lines, wherein from the top view, each second-word-line has a first portion, a second portion, and a third portion;
• and
• a memory array having a first side, a second side laterally opposite the first side, and a third side;
• wherein the first portion of each first-word-line is spaced apart from the respective third portion, and the first portion of each second-word-line is spaced apart from the respective third portion,
• wherein the second portion of each first-word-line is non-parallel and non-co-linear with the respective first portion and the respective third portion, and the second portion of each second-word-line is non-parallel and non-co-linear with the respective first portion and the respective third portion,
• wherein each first-word-line is disposed such that the respective second portion is adjacent to the first side, and each second-word-line is disposed such that the respective second portion is adjacent to the second side,
• wherein the first portion of each first-word-line has a first length, the second portion of each first-word-line has a second length, and the third portion of each first-word-line has a third length,
• wherein the first portion of each second-word-line has a fourth length, the second portion of each second-word-line has a fifth length, and the third portion of each second-word-line has a sixth length,
• wherein the first length is greater than the third length, and the fourth length is greater than the sixth length,
• wherein within the memory array, the first portion of each first-word-line extends vertically to form vertically-oriented first gate electrodes, and the first portion of each second-word-line extends vertically to form vertically-oriented second gate electrodes, and
• wherein from the top view, a first one of the plurality of first-word-lines is adjacent to a second one of the plurality of first-word-lines in a bit-line direction, the third portion of the first one in the plurality of first-word-lines is farther from the third side than the first portion of the first one, and the third portion of the second one in the plurality of first-word-lines is closer to the third side than the first portion of the second one.