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US 12,756,383 B2Granted
Switching of power semiconductor devices by programmable current pulses
AssigneeOPTUNITY, Inc
InventorTa-Chung Wu
Life of this patent
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Abstract
A circuit for switching a power semiconductor device has a power semiconductor device. A controlled current pulse source is coupled to the power semiconductor device generating a positive current pulse to switch ON the power semiconductor device and a negative current pulse to switch OFF the power semiconductor device.
Claims11
A circuit for switching a power semiconductor device comprising:
- a power semiconductor device;
- and
- a controlled current pulse source coupled to the power semiconductor device generating a positive current pulse to switch ON the power semiconductor device and a negative current pulse to switch OFF the power semiconductor device, wherein the controlled current pulse source comprises a first plurality of photodiodes connected in series and a second plurality of photodiodes connected in series and parallel to the first plurality of photodiodes, wherein the second plurality of photodiodes are an opposite polarity from the first plurality of photodiodes.
A circuit for switching a power semiconductor device comprising:
- a power semiconductor device;
- a controlled current pulse source coupled to the power semiconductor device generating a positive current pulse to switch ON the power semiconductor device and a negative current pulse to switch OFF the power semiconductor device, wherein the positive current pulse charges both a capacitance between a gate and a source CGS of the power semiconductor device and a capacitance between the gate and a drain CGD of the power semiconductor device concurrently to switch ON the power semiconductor device and the negative current pulse discharges both CGS and CGD concurrently to switch OFF the power semiconductor device, wherein the controlled current pulse source adjusts the negative current pulse to drain out a displacement current going through CGD;
- and
- at least one clamping diode coupled in parallel to the controlled current pulse source to limit a transient voltage between the gate and the source of the power semiconductor device;
- wherein the controlled current pulse source comprises a first plurality of photodiodes connected in series and a second plurality of photodiodes connected in series and parallel to the first plurality of photodiodes, wherein the second plurality of photodiodes are an opposite polarity from the first plurality of photodiodes.
2 more elements
Dependencies are inferred from the claim text.