Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
AssigneeKokusai Electric Corporation
InventorsKimihiko Nakatani, Takayuki Waseda
Life of this patent
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Abstract
There is provided a technique that includes: (a) arranging a plurality of first substrates, each including a surface on which a concave structure is formed, in multiple stages within a first region along a direction perpendicular to the surface; (b) supplying a first processing gas toward at least a portion of the first region; and (c) supplying an inert gas different from the first processing gas toward the at least a portion of the first region, wherein the first region includes a first zone including one end of the first region, a third zone including the other end of the first region, and a second zone located between the first zone and the third zone.
Claims18
A method of processing a substrate, comprising:
- (a) arranging a plurality of first substrates, each including a surface on which a concave structure is formed, in multiple stages in a first region along a direction perpendicular to the surface;
- (b) supplying a first processing gas toward at least a portion of the first region;
- and
- (c) supplying an inert gas different from the first processing gas toward the at least a portion of the first region,
- wherein the first region includes a first zone including one end of the first region, a third zone including the other end of the first region, and a second zone located between the first zone and the third zone, and
- wherein in (c), the inert gas is supplied toward the second zone and is supplied toward at least one selected from the group of the first zone and the third zone at a flow rate smaller than a flow rate of the inert gas supplied toward the second zone, or the inert gas is supplied toward the second zone and is not supplied toward the first zone and the third zone.
Dependencies are inferred from the claim text.