Chemical vapor deposition equipment and method therefor

A processing equipment for epitaxial growth, comprising:

• a reaction chamber with a gas inlet and a gas outlet provided at both ends, wherein a susceptor is provided therein for carrying substrate, the gas inlet and the gas outlet are used for forming a reaction gas flow parallel to the susceptor;
• the reaction chamber comprises a gas inlet area corresponding to the gas inlet, a gas outlet area corresponding to a gas exhaust, and a reaction area between the gas inlet area and the gas outlet area, the reaction chamber comprising a top wall in a dome-shape, a height from an edge of the substrate to the top wall being H1, and a height from a center of the substrate to the top wall being H2, H2<1.05* H1;
• an outer housing, provided outside the reaction chamber, wherein an accommodation space is formed between an inner wall of the outer housing and an outer wall of the reaction chamber, and the accommodation space is connected to a first pressure adjusting device, the outer housing enclosing the reaction chamber to shield the top wall in the dome-shape from atmospheric pressure;
• and
• a plurality of radiant heat sources, provided in the accommodation space and outside the reaction chamber for heating the substrate.

A vacuum processing equipment, comprising:

• a vacuum processing chamber, having a gas inlet and a gas outlet, and a susceptor being provided in the vacuum processing chamber for carrying a substrate, the vacuum processing chamber comprising a top wall in a dome-shape, a height from an edge of the substrate to the top wall being H1, and a height from a center of the substrate to the top wall being H2, H2<1.05* H1;
• an outer housing, provided outside the vacuum processing chamber, an accommodation space being formed between an inner wall of the outer housing and an outer wall of the vacuum processing chamber, the outer housing enclosing the vacuum processing chamber to shield the top wall in the dome-shape from atmospheric pressure;
• a plurality of radiant heat sources, provided in the accommodation space and used for heating the substrate through the outer wall of the vacuum processing chamber;
• and
• one or more pressure adjusting devices, used for independently regulating an pressure in the vacuum processing chamber and the accommodation space, wherein two ends of the vacuum processing chamber comprise a first flange and a second flange, and the first flange and the second flange are closely attached to a first fastener and a second fastener on the outer housing, respectively;
• and
• an outlet end of the outer housing comprises an outer housing end plate, a gap is formed between the outer housing end plate and the second fastener, and at least one pressure device is provided inside the gap or outside the outer housing for providing compressive force to the second fastener.