Heating apparatus and chemical vapor deposition system

A chemical vapor deposition system, comprising:

• a chamber;
• a heating apparatus, disposed in the chamber, wherein the heating apparatus comprises:
• a rotating stage, comprising a rotating axis;
• a plurality of wafer carriers, disposed on the rotating stage, wherein the rotating stage drives the wafer carriers to rotate on the rotating axis;
• a plurality of first heaters, disposed in a first heating region, wherein there is a first spacing Sa between any two adjacent first heaters, and each of the first heaters comprises a first width Wa in a radial direction of the rotating stage;
• at least one second heater, disposed in a second heating region, wherein each of the at least one second heater comprises a second width Wb in the radial direction of the rotating stage, there is a smallest spacing Sab between the at least one second heater and the first heating region, and Wa, Wb, Sa and Sab satisfy the equation:
• Wa/(Wa+Sa)≥Wb/(Wb+Sab);
• at least one third heater, disposed under a third heating region, wherein at least part of the third heating region does not overlap the rotating stage, the third heater comprises a third width Wc in the radial direction of the rotating stage, there is a smallest spacing Sac between the at least one third heater and the first heating region, and Wa, Wc, Sa and Sac satisfy the equation:
• Wa/(Wa+Sa)≥Wc/(Wc+Sac);
• and
• at least one fourth heater, disposed under a fourth heating region, wherein the fourth heating region does not overlap the rotating stage, the fourth heater comprises a fourth width Wd in the radial direction of the rotating stage, there is a smallest spacing Sbd between the at least one fourth heater and the second heating region, there is a distance H between the rotating stage and the at least one fourth heater in an axial direction of the rotating axis, and Wd, Sbd, Wb, Sab and H satisfy the equation:
• Wb/(Wb+Sab)>Wd/[(Wd+Sbd)·Hn1], where n1 is greater than 0,
• wherein the rotating stage further comprises an opening disposed between the wafer carriers, the rotating axis passes through the opening, and the at least one fourth heater completely overlaps the opening in the axial direction of the rotating axis;
• a rotation driving mechanism, connected to the rotating stage and driving the rotating stage to rotate;
• and
• an air inlet unit, disposed in the chamber and located above the rotating stage;
• wherein, a vertical projection of each of the wafer carriers on the rotating stage overlaps a vertical projection of the first heating region on the rotating stage.