Interconnect design of a thin film resistor

A semiconductor resistor structure, comprising:

• a resistive layer;
• a first conductive bus structure above and along a first edge of the resistive layer,
• wherein, in a top-down view of the semiconductor resistor structure, the first conductive bus structure has a first length;
• a first row of contact structures between the first conductive bus structure and along the first edge of the resistive layer,
• wherein the first row of contact structures electrically connects the first conductive bus structure to the first edge of the resistive layer;
• a second conductive bus structure above and along a second edge of the resistive layer,
• wherein the second edge is opposite the first edge, and
• wherein, in the top-down view of the semiconductor resistor structure, the second conductive bus structure has the first length;
• and
• a second row of contact structures between the second conductive bus structure and along the second edge of the resistive layer,
• wherein the second row of contact structures electrically connects the second conductive bus structure to the second edge of the resistive layer, and
• wherein, in the top-down view of the semiconductor resistor structure, a distance between the second row of contact structures and the first row of contact structures is lesser relative to the first length.

A method, comprising:

• forming a row of contact structures along a length-wise edge of an approximately rectangular-shaped resistive layer;
• forming a dielectric layer over the row of contact structures;
• forming a recess in the dielectric layer having a first side that is biased near the row of contact structures and a second side that is opposite the first side and biased away from the row of contact structures,
• wherein the recess exposes the row of contact structures,
• wherein forming the recess includes forming a cavity that extends laterally from an approximate midpoint of the second side and away from the first side, and
• wherein a width of the cavity is lesser relative to a length of the recess;
• and
• forming a conductive bus structure in the recess,
• wherein forming the conductive bus structure electrically connects the conductive bus structure to the approximately rectangular-shaped resistive layer through the row of contact structures, and
• wherein forming the conductive bus structure comprises forming an electrical terminal in the cavity.