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US 12,751,049 B2Granted
Semiconductor film
AssigneeNGK Insulators, Ltd.
InventorsMorimichi Watanabe, Hiroshi Fukui
Life of this patent
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Abstract
Provided is a semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, and an X-ray rocking curve full width at half maximum of a (104) plane on at least one surface of the semiconductor film is 500 arcsec or less.
Claims7
A semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, wherein an X-ray rocking curve full width at half maximum of a (104) plane on at least one surface of the semiconductor film is 500 arcsec or less;
- wherein an X-ray rocking curve full width at half maximum of a (006) plane on at least one surface of the semiconductor film is 50 arcsec or less;
- wherein the semiconductor film is formed on a substrate made of a biaxial orientation substrate composed of a solid solution of α-Cr2O3 and a different material, or a composite base substrate having an orientation layer composed of the solid solution of α-Cr2O3 and the different material;
- and
- wherein the different material is at least one selected from the group consisting of αAl2O3, α-Fe2O3, α-TiO3, α-V2O3, and α-Rh2O3.
1 more element
Dependencies are inferred from the claim text.