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US 12,749,522 B2Granted
Semiconductor memory device and method for controlling the same for row-hammer refresh operations without reducing the performance of normal refresh operations
AssigneeWinbond Electronics Corp.
InventorShinya Okuno
Life of this patent
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Abstract
Provided are a semiconductor memory device and method for controlling the same, to carry out row-hammer refresh operations without degrading the performance of the normal refresh operation. The semiconductor device includes a control section 10 configured to simultaneously refresh each memory cell connected to a plurality of word lines in response to a refresh request, and performing a row-hammer refresh operation after executing at least one normal refresh operation.
Claims12
A semiconductor memory device, comprising:
- a control section, configured to control a normal refresh operation in response to a refresh request, wherein the normal refresh operation simultaneously refreshes every memory cell connected to a plurality of word lines, and to control the execution of a row-hammer refresh operation after the normal refresh operation is performed at least once;
- wherein the control section further comprises:
- a first selection unit configured to select a first row address input from outside when the normal refresh operation is not performed, and select a second row address that becomes a target row address of the normal refresh operation when the normal refresh operation is performed;
- and
- a second selection unit configured to select row address selected by the first selection unit when the row-hammer refresh operation is not performed, and select a third row address that becomes a target row address of the row-hammer refresh operation when the row-hammer refresh operation is performed.
2 more elements
A method for controlling a semiconductor memory device, comprising:
- by a control section of the semiconductor memory device,
- controlling a normal refresh operation in response to a refresh request to simultaneously refresh memory cells connected to a plurality of word lines, controlling execution of a row-hammer refresh operation after the normal refresh operation has been performed at least once;
- selecting a first row address input from outside when the normal refresh operation is not performed and selecting a second row address that becomes a target row address of the normal refresh operation when the normal refresh operation is performed, and
- selecting row address selected by said selecting when the row-hammer refresh operation is not performed and selecting a third row address that becomes a target row address of the row-hammer refresh operation when the row-hammer refresh operation is performed.
1 more element
Dependencies are inferred from the claim text.