Control of metallic contamination from metal-containing photoresist

A method of controlling contamination on a substrate, the method comprising:

• (a) either (i) processing a frontside of the substrate, thereby causing formation of contamination on a backside of the substrate, or (ii) receiving the substrate with contamination on the backside of the substrate, the contamination comprising a metal, wherein the operations of (i) and (ii) are performed after exposing a layer of photoresist to an EUV and after or during at least a portion of the layer of the photoresist being removed by a development chemistry to form a pattern;
• and
• (b) after (a), heating the substrate and exposing the substrate to plasma in a post-processing bake process,
• wherein the post-processing bake process of (b) is a post-development bake process that occurs after exposing the layer of photoresist to the EUV and at least a portion of the layer of photoresist is removed by the development chemistry to form the pattern,
• wherein the post-development bake process of (b), the substrate is baked at a temperature between about 160-250° C. for a duration between about 1-10 minutes, and
• wherein heating the substrate in the post-development bake process and exposing the substrate to plasma reduces the concentration of the metal on the backside of the substrate by at least an order of magnitude.