Array substrate with thin film transistor of vertical structure and display panel thereof
AssigneeWuhan China Star Optoelectronics Technology Co., Ltd.
InventorChengzhi Luo
Life of this patent
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Abstract
A display panel and an array substrate are provided. The array substrate includes a first thin film transistor of a vertical structure. The first TFT includes a first source, an interlayer insulating layer, a first gate, a first drain, and a first active layer. The interlayer insulating layer covers the first source. A hole penetrates the interlayer insulating layer. The first gate is embedded in the interlayer insulating layer. The first drain is disposed on a side of the insulating layer away from the first source. The first active layer connects to the first source and the first drain via the hole.
Claims16
An array substrate, comprising a first thin film transistor (TFT) of a vertical structure, the first TFT comprising:
- a first source;
- an interlayer insulating layer, covering the first source, wherein a hole penetrates the interlayer insulating layer to expose part of the first source;
- a first gate, fully embedded in the interlayer insulating layer and at a side of the hole;
- a first drain, disposed on an outer side of the interlayer insulating layer away from the first source;
- and
- a first active layer, part of the first active layer being disposed in the hole and being electrically connected to the first source and the first drain;
- wherein the first drain covers another part of the first active layer, wherein the other part of the first active layer is on an outer surface of the interlayer insulating layer away from the first source;
- wherein the first active layer is disposed on a side wall and a bottom of the hole and extends to the interlayer insulating layer away from the first source;
- wherein the first gate is disposed around the first active layer arranged on the side wall of the hole;
- wherein the other part of the first active layer that is covered by the first drain is not disposed in the hole.
A display panel comprising an array substrate and an opposing substrate disposed opposite the array substrate, the array substrate comprising a first thin film transistor (TFT) of a vertical structure, the first TFT comprising:
- a first source;
- an interlayer insulating layer, covering the first source, wherein a hole penetrates the interlayer insulating layer to expose part of the first source;
- a first gate, fully embedded in the interlayer insulating layer and at a side of the hole;
- a first drain, disposed on an outer side of the interlayer insulating layer away from the first source;
- and
- a first active layer, part of the first active layer being disposed in the hole and being electrically connected to the first source and the first drain;
- wherein the first drain covers another part of the first active layer, wherein the other part of the first active layer is on an outer surface of the interlayer insulating layer away from the first source;
- wherein the first active layer is disposed on a side wall and a bottom of the hole and extends to the interlayer insulating layer away from the first source;
- wherein the first gate is disposed around the first active layer arranged on the side wall of the hole;
- wherein the other part of the first active layer that is covered by the first drain is not disposed in the hole.
Dependencies are inferred from the claim text.