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US 12,745,385 B2Granted
Semiconductor device and method for forming the same
AssigneeSK hynix Inc.
InventorsSeong Wan Ryu, Yoon Jae Nam
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Abstract
A semiconductor device includes a trench formed in a substrate; a gate dielectric layer suitable for covering a bottom surface and sidewalls of the trench; a first gate electrode suitable for gap-filling a bottom portion of the trench over the gate dielectric layer; a second gate electrode formed over the first gate electrode; and an anti-oxidation layer disposed at an interface between the first gate electrode and the second gate electrode.
Claims16
A semiconductor device, comprising:
- a trench formed in a substrate;
- a gate dielectric layer suitable for covering a bottom surface and sidewalls of the trench;
- a first gate electrode suitable for gap-filling a bottom portion of the trench over the gate dielectric layer;
- a second gate electrode formed over the first gate electrode;
- and
- a polysilicon layer disposed at an interface between the first gate electrode and the second gate electrode.
3 more elements
A method for forming a semiconductor device having a buried gate structure, comprising:
- forming a trench in a substrate;
- covering a bottom surface and sidewalls of the trench with a gate dielectric layer;
- gap-filling a bottom portion of the trench over the gate dielectric layer with a first gate electrode;
- disposing a polysilicon layer locally on the first gate electrode;
- forming over the polysilicon layer and in the trench a second gate electrode;
- forming over the second gate electrode and in the trench a capping layer and thereby completing the buried gate structure;
- and
- forming source-drain regions in the substrate adjacent to the trench.
5 more elements
Dependencies are inferred from the claim text.