Semiconductor storage device, printing apparatus, and write control method of semiconductor storage device

A semiconductor storage device configured to control writing in a memory unit including an anti-fuse element, the device comprising:

• a comparison unit configured to compare, with a reference voltage, a voltage generated across a resistor element connected in series with a power supply line used to energize the anti-fuse element;
• and
• a control unit configured to, in writing in the memory unit, control writing in the anti-fuse element of the memory unit based on an output of the comparison unit, wherein
• the memory unit includes
• the anti-fuse element,
• a first resistor element connected in parallel with the anti-fuse element, and
• a drive element configured to control energization of the anti-fuse element.

A printing apparatus comprising

• a printhead including a plurality of discharge ports, and
• a printhead board,
• wherein
• the printhead board includes discharge elements provided so as to correspond to the plurality of discharge ports, and drive units electrically connected to the discharge elements,
• the apparatus includes:
• a semiconductor storage device configured to control writing in a memory unit including an anti-fuse element;
• and
• a printing apparatus control unit configured to control data writing in the semiconductor storage device and data reading out from the semiconductor storage device,
• the semiconductor storage device includes:
• a comparison unit configured to compare, with a reference voltage, a voltage generated across a resistor element connected in series with a power supply line used to energize the anti-fuse element;
• and
• a control unit configured to, in writing in the memory unit, control writing in the anti-fuse element of the memory unit based on an output of the comparison unit, and
• the comparison unit includes:
• an amplifier circuit configured to receive and amplify the voltage generated across the resistor element;
• and
• a comparator circuit configured to compare an output of the amplifier circuit with the reference voltage, and
• the control unit determines, based on an output of the comparator circuit, whether writing in the anti-fuse element of the memory unit is complete.

A write control method of a semiconductor storage device configured to control writing in a memory unit including an anti-fuse element, the device including a comparison unit configured to compare, with a reference voltage, a voltage generated across a resistor element connected in series with a power supply line used to energize the anti-fuse element, the comparison unit including:

• an amplifier circuit configured to receive and amplify the voltage generated across the resistor element;
• and a comparator circuit configured to compare an output of the amplifier circuit with the reference voltage,
• the method comprising:
• selecting a write target anti-fuse element;
• energizing the selected anti-fuse element via the power supply line;
• and
• controlling writing in the anti-fuse element based on an output of the comparison unit configured to compare, with the reference voltage, a voltage generated, by the energizing, across the resistor element connected in series with the power supply line,
• wherein it is determined in the controlling whether writing in the anti-fuse element of the memory unit is complete based on an output of the comparator circuit.