Semiconductor pattern and method of rounding the same
AssigneeUnited Microelectronics Corp.
InventorsBo-Wei Huang, Po-Hung Chen, Chun-Cheng Yu, I-Hsien Liu, Ho-Yu Lai, Kuan-Wen Fang, Chih-Sheng Chang
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Abstract
A semiconductor pattern is provided in the present invention, including a first line extending to one end in a first direction and a second line extending in a second direction perpendicular to the first direction and adjacent to the end of the first line in the first direction, wherein the end of the first line is provided with a rounding feature, the first line has a width in the second direction, and the width is gradually increased to a maximum width toward the end and gradually converged to form the rounding feature.
Claims8
A semiconductor pattern, comprising:
- a first line extending to one end in a first direction;
- and
- a second line extending in a second direction perpendicular to said first direction and adjacent to said end of said first line, wherein said second line does not overlap said first line in a vertical direction, said vertical direction being perpendicular to said first direction and said second direction, and a first spacing is defined between said end and said second line in said first direction;
- wherein said end of said first line is provided with a rounding feature, said first line has a width in said second direction, and said width gradually increases to a maximum width toward said end and then gradually decreases and converges to form said rounding feature at said end.
Dependencies are inferred from the claim text.