Electronic control unit and gate driving method of power semiconductor element
AssigneeHitachi Astemo, Ltd.
InventorsMasahiro Doi, Takeshi Ikuyama, Takuya Iinuma
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AssigneeHitachi Astemo, Ltd.
InventorsMasahiro Doi, Takeshi Ikuyama, Takuya Iinuma
Estimating the term…
In an electronic control unit on which a power semiconductor element is mounted, provided is a highly reliable and low-loss electronic control unit capable of performing a high-speed switching operation while suppressing a surge voltage during a switching operation of the power semiconductor element. The electronic control unit includes: a microcontroller; a power semiconductor element; and a gate drive circuit that generates a gate drive current of the power semiconductor element on a basis of a command from the microcontroller. The gate drive circuit detects a change in an output voltage of the power semiconductor element to detect start of on/off operation of switching, increases a gate drive current in a process of the switching in an on state and before reaching a peak voltage, and decreases the gate drive current in a process of the switching in an off state and before reaching the peak voltage.
An electronic control unit comprising:
A gate driving method of a power semiconductor element, comprising:
Dependencies are inferred from the claim text.