Gate driver for threshold voltage detection and compensation
AssigneeKabushiki Kaisha Toshiba
InventorsZhengyang Feng, Manish Kumar
Life of this patent
Estimating the term…
Abstract
A gate driver for a power semiconductor device. The gate driver includes a detection circuit arranged to detect a threshold voltage of a power semiconductor device, and a gate drive circuit arranged to provide, based at least in part on the threshold voltage detected by the detection circuit, a drive signal to the power semiconductor device for operating the power semiconductor device. The drive signal has a waveform shaped to compensate for deviation or variation of the threshold voltage from a nominal threshold voltage for the power semiconductor device.
Claims20
A gate driver for a power semiconductor device, comprising:
- a detection circuit arranged to detect a threshold voltage of a power semiconductor device;
- and
- a gate drive circuit arranged to provide, based at least in part on the threshold voltage detected by the detection circuit, a drive signal to the power semiconductor device for operating the power semiconductor device, the drive signal having a waveform shaped to compensate for a deviation or variation of the threshold voltage from a nominal threshold voltage for the power semiconductor device.
A method for controlling operation of a power semiconductor device, the method comprising:
- detecting, using a gate driver, a threshold voltage of a power semiconductor device;
- and
- providing, using the gate driver and based at least in part on the detected threshold voltage, a drive signal to the power semiconductor device for operating the power semiconductor device, the drive signal having a waveform shaped to compensate for a deviation or variation of the threshold voltage from a nominal threshold voltage for the power semiconductor device.
Dependencies are inferred from the claim text.