Substrate processing apparatus for processing a substrate in one process chamber

A substrate processing apparatus comprising:

• a substrate having a first surface and a second surface opposite from the first surface, wherein the first surface includes a first area and a second area surrounding the first area;
• a process chamber having a space in which the substrate is disposed;
• a support plate having a third surface disposed under the second surface of the substrate, and a fourth surface opposite from the third surface;
• a rotator connected to the fourth surface of the support plate and configured to rotate the support plate;
• a first irradiation module disposed in the process chamber and configured to generate a first light pulse and direct the first light pulse to the first area of the substrate;
• a second irradiation module disposed in the process chamber and configured to generate a second light pulse and irradiate the second light pulse to the second area of the substrate;
• a controller configured to control an intensity of each of the first light pulse and the second light pulse generated by each of the first irradiation module and the second irradiation module, respectively;
• and
• a fluid supplier configured to supply fluid to the first surface of the substrate disposed on the support plate,
• wherein a period during which the fluid supplier supplies the fluid to the first surface of the substrate includes a first time period and a second time period after the first time period,
• wherein a sum of an intensity of the first light pulse and an intensity of the second light pulse during the first time period is greater than a sum of an intensity of the first light pulse and an intensity of the second light pulse during the second time period, and
• wherein the fluid includes a developer.

A substrate processing apparatus comprising:

• a process chamber having a space in which a substrate is disposed;
• a supporter configured to support and rotate the substrate;
• a heater disposed on top of the substrate and spaced apart from the substrate, wherein the heater is configured to direct a light pulse to the substrate to perform a first treatment and a second treatment on the substrate, and wherein the second treatment is different from the first treatment;
• a controller configured to control an intensity of the light pulse generated by the heater;
• and
• a fluid supplier configured to supply fluid to the substrate to perform a third treatment on the substrate, wherein the third treatment is different from the first treatment and the second treatment,
• wherein the substrate processing apparatus is configured to:
• perform the first treatment using the heater during a first time period inside the process chamber;
• perform the third treatment using the fluid supplier during a second time period after the first time period and a third time period after the second time period inside the process chamber;
• and
• perform the second treatment using the heater during a fourth time period after the third time period inside the process chamber,
• wherein the controller is configured to control the intensity of the light pulse generated by the heater to:
• apply heat to the substrate at a first temperature during the first time period;
• apply heat to the substrate at a second temperature lower than a first temperature during the second time period;
• apply heat to the substrate at a third temperature lower than the second temperature during the third time period;
• and
• apply heat to the substrate at a fourth temperature higher than the second temperature during the fourth time period.