Back to results
US 12,727,172 B2Granted
Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorsYoon Mo Koo, Hyung Dong Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include: a first access line extending in a first direction; a second access line extending in a second direction intersecting the first direction; and a memory cell connected between the first access line and the second access line and including an electrode including a dielectric barrier therein.
Claims19
A semiconductor device comprising:
- a first access line extending in a first direction;
- a second access line extending in a second direction that intersects the first direction;
- and
- a memory cell connected between the first access line and the second access line and including an electrode including a dielectric barrier therein,
- wherein the electrode includes a first conductive layer, a second conductive layer, and the dielectric barrier located between the first conductive layer and the second conductive layer, and
- wherein the dielectric barrier includes a plurality of portions distributed over a surface of the first conductive layer to partially cover the surface of the first conductive layer.
3 more elements
A semiconductor device comprising:
- a first access line;
- a second access line crossing the first access line;
- and
- a memory cell connected between the first access line and the second access line and including an electrode,
- wherein the electrode comprises:
- a first conductive layer;
- a second conductive layer;
- and
- a dielectric barrier disposed at an interface between the first conductive layer and the second conductive layer, wherein the dielectric barrier includes a plurality of discrete portions spaced apart from each other along the interface.
6 more elements
Dependencies are inferred from the claim text.