Oblique angled ion implantation for substrate stress control

A method of stress management in a substrate, comprising:

• providing a substrate on a platen that defines a substrate plane, wherein the substrate defines an initial out-of-plane distortion (OPD) pattern;
• and
• directing an angled implantation process to a substrate surface of the substrate, wherein a group of ions of an ion beam impinge on the substrate along a beam trajectory that defines a non-zero angle of incidence with respect to a normal to the substrate plane, and
• wherein the OPD pattern is altered after the angled implantation process.