Composition for forming resist underlayer film
AssigneeNissan Chemical Corporation
InventorsHiroto Ogata, Tomotada Hirohara, Hirokazu Nishimaki, Makoto Nakajima
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AssigneeNissan Chemical Corporation
InventorsHiroto Ogata, Tomotada Hirohara, Hirokazu Nishimaki, Makoto Nakajima
Estimating the term…
A composition for forming a resist underlayer film which enables to form a flat film with a favorable coating even on a so-called stepped substrate and a small film thickness difference after embedding, and also a polymer as an important component of the composition for forming a resist underlayer film, a resist underlayer film formed using the composition for forming a resist underlayer film, and a method of producing a semiconductor device. The composition for forming a resist underlayer film, includes a compound of the following Formula (1) and a solvent: (wherein, Ar1, Ar2, Ar3 and Ar4 are each independently a substitutable monovalent aromatic hydrocarbon group, a, b, c, and d are each 0 or 1, and a+b+c+d=1).
A composition for forming a resist underlayer film, the composition comprising a compound of the following Formula (1) and a solvent:
Dependencies are inferred from the claim text.