Semiconductor photoresist compositions and methods of forming patterns using the composition

A semiconductor photoresist composition, comprising:

• a tin (Sn)-containing organometallic compound represented by Chemical Formula 2;
• a compound represented by Chemical Formula 1;
• and
• a solvent:
• wherein, in Chemical Formula 1,
• L1 is a single bond or a substituted or unsubstituted C1 to C10 alkylene group, and
• R1 is a substituted or unsubstituted C2 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, -La-X1—Ra, wherein X1 is O or S, La is a single bond or a substituted or unsubstituted C1 to C20 alkylene group, and Ra is a substituted or unsubstituted C1 to C20 alkyl group or a substituted or unsubstituted C6 to C30 aryl group, or -Lb-N(Rb)(Rc), wherein, Lb is a single bond or a substituted or unsubstituted C1 to C20 alkylene group, and Rb and Rc are each independently hydrogen or a substituted or unsubstituted C1 to C20 alkyl group;
• wherein, in Chemical Formula 2,
• R2 is selected from a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, and a substituted or unsubstituted C7 to C30 arylalkyl group,
• R3 to R5 are each independently alkoxy and aryloxy —ORd, wherein Rd is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof.