Forming an indium chalcogenide film
AssigneeMicron Technology, Inc.
InventorsTimothy A. Quick, Jean-Sebastien Materne Lehn
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Abstract
Methods, systems, and devices for forming an indium chalcogenide film are described. Precursors that include an indium-cyclopentadienyl compound may enable formation of indium chalcogenide films at a lower temperature as compared to other precursors including indium, as the reactivity of indium-cyclopentadienyl compounds may be higher than these other precursors. Additionally, using ammonia as a reagent during the atomic layer deposition process to form the indium chalcogenide film may enable an increased rate of formation of indium chalcogenide films for a given temperature. A method may include reacting an indium-cyclopentadienyl precursor and a second precursor that includes a selenium compound or a tellurium compound to form an indium chalcogenide.
Claims30
A method, comprising:
- reacting an indium-cyclopentadienyl precursor and a second precursor comprising a selenium compound or a tellurium compound to form an indium chalcogenide, the indium-cyclopentadienyl precursor comprising the chemical formula In—C5B1B2B3B4B5, wherein each of B1, B2, B3, B4, and B5 are independently selected from:
- hydrogen,
- deuterium,
- an alkyl group,
- an aryl group,
- a first moiety containing carbon,
- a second moiety containing silicon,
- a third moiety containing germanium,
- a fourth moiety containing tin,
- a fifth moiety comprising the chemical formula —SiBaBbBc,
- a sixth moiety comprising the chemical formula —GeBaBbBc,
- a seventh moiety comprising the chemical formula —SnBaBbBc,
- an eighth moiety comprising the chemical formula —CBaBbSiBcBdBe,
- a ninth moiety comprising the chemical formula —CBaBbGeBcBdBe, or
- a tenth moiety comprising the chemical formula —CBaBbSnBcBdBe,
- wherein each of Ba, Bb, Bc, Bd, and Be are independently selected from hydrogen, deuterium, an alkyl group, or an aryl group.
A method, comprising:
- depositing an indium-cyclopentadienyl compound for a first duration at a first temperature and a first pressure on a substrate, wherein deposition of the indium-cyclopentadienyl compound forms a first compound;
- removing at least a portion of the indium-cyclopentadienyl compound;
- depositing a second compound comprising a selenium compound or a tellurium compound for a second duration at the first temperature and the first pressure on the substrate, wherein the second compound reacts with the first compound to form an indium chalcogenide;
- and
- removing the second compound.
A method, comprising:
- depositing an indium-cyclopentadienyl compound for a first duration at a first temperature and a first pressure on a substrate, wherein deposition of the indium-cyclopentadienyl compound forms a first compound;
- removing at least a portion of the indium-cyclopentadienyl compound;
- depositing an ammonia compound for a second duration;
- depositing a selenium compound for a third duration at the first temperature and the first pressure on the substrate, wherein the selenium compound reacts with the first compound to form an indium chalcogenide;
- and
- removing the selenium compound.
A method, comprising:
- forming a stack of layers over a substrate, the stack of layers comprising layers of a first material and a second material;
- forming one or more word lines in the stack of layers using a metallization process, and
- forming one or more memory cells in the stack of layers, each memory cell of the one or more memory cells coupled between a respective word line of the one or more word lines and a respective conductive pillar of one or more conductive pillars, wherein forming a memory material of the one or more memory cells comprises:
- depositing an indium-cyclopentadienyl compound for a first duration at a first temperature and a first pressure on a substrate, wherein deposition of the indium-cyclopentadienyl compound forms a first compound;
- removing at least a portion of the indium-cyclopentadienyl compound;
- depositing a selenium compound for a second duration at the first temperature and the first pressure on the substrate, wherein the selenium compound reacts with the first compound to form an indium chalcogenide;
- and
- removing the selenium compound.
Dependencies are inferred from the claim text.