Mini environment instrumented wafer

A system comprising:

• A semiconductor process tool;
• and
• An instrumented substrate comprising:
• a substrate body;
• one or more sensors coupled to the substrate body and configured to measure one or more conditions of at least one of the substrate body or of an external environment proximate to a surface of the substrate body;
• and
• a controller communicatively coupled to the one or more sensors and configured to:
• measure sensor data from the one or more sensors indicative of the measured one or more conditions;
• and
• transmit the sensor data indicative of the one or more conditions to a controller of a semiconductor process tool,
• wherein the substrate body comprises one or more sets of a plurality of channels within the substrate body, wherein the one or more sensors comprises a first sensor, channels of the one or more sets of the plurality of channels comprises a first set of channels, and the first sensor is connected to the first set of channels,
• wherein each channel of the first set of channels comprises an open channel configured to allow a flow of gas through the open channel,
• wherein each channel of the first set of channels is coupled to an opening defined by the surface of the substrate body and fluidically connected to the external environment proximate to the surface of the substrate body,
• wherein the first sensor comprises a plurality of ports, each port coupled to a respective channel of the first set of channels, and wherein the first sensor is configured to measure a separate condition at each port, wherein
• the first set of channels comprise a first channel, a second channel and a third channel,
• wherein the first channel extends in a first direction, the second channel extends in a second direction, and a third channel extends in a third direction, wherein each of the first direction, second direction, and third direction are not parallel to each other.

A method for measuring substrate processing conditions comprising:

• positioning an instrumented wafer within a semiconductor process tool;
• measuring, with one or more sensors, one or more conditions of at least one of a substrate body of an instrumented wafer or an external environment proximate to a surface of the substrate body, wherein the one or more sensors are coupled to the substrate body;
• and
• transmitting sensor data indicative of the one or more conditions to a controller of the semiconductor process tool,
• wherein the substrate body comprises one or more sets of a plurality of channels within the substrate body, wherein the one or more sensors comprises a first sensor, the one or more sets of the plurality of channels comprises a first set of channels, and the first sensor is connected to the first set of channels,
• wherein each channel of the one or more sets of the plurality of channels comprises an open channel configured to allow a flow of gas through the open channel,
• wherein each channel of the first set of channels is coupled to an opening defined by the surface of the substrate body and fluidically connected to the external environment proximate to the surface of the substrate body,
• wherein the first sensor comprises a plurality of ports, each port coupled to a respective channel of the first set of channels, and wherein the first sensor is configured to measure a separate condition at each port, wherein
• the first set of channels comprise a first channel, a second channel and a third channel,
• wherein the first channel extends in a first direction, the second channel extends in a second direction, and a third channel extends in a third direction, wherein each of the first direction, second direction, and third direction are not parallel to each other.