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US 12,720,852 B2Granted
Semiconductor devices to detect one or more environmental conditions
AssigneeAnalog Devices International Unlimited Company
InventorEdward Coyne
Life of this patent
Estimating the term…
Abstract
Semiconductor devices can include a reservoir of ions and one or more channel regions. Additionally, the semiconductor devices can include one or more diffusion control devices that control the flow of ions from the reservoir to the one or more channel regions. The presence of ions in the one or more channel regions can be detected and used to determine that the semiconductor devices have been subjected to one or more events.
Claims20
A semiconductor device comprising:
- a reservoir of ions having an outer shell and an interior region, wherein the ions are disposed in the interior region and the outer shell is comprised of one or more metals;
- one or more silicon oxide regions disposed adjacent to the reservoir of ions;
- one or more channel regions disposed below the reservoir and below the one or more silicon oxide regions, the one or more channel regions comprising one or more metal oxide materials;
- and
- an ion diffusion control device coupled to the reservoir and including the one or more channel regions, wherein an electric field generated by the ion diffusion control device controls diffusion of the ions from the reservoir into the one or more channel regions.
2 more elements
A semiconductor device comprising:
- a reservoir of ions;
- and
- a plurality of metal-oxide semiconductor (MOS) devices to control diffusion of the ions from the reservoir into one or more channel regions of the plurality of MOS devices.
A process comprising:
- providing an amount of ions;
- contacting a reservoir region of a semiconductor device with the amount of ions such that the amount of ions are stored in the reservoir region, the semiconductor device comprising:
- one or more silicon oxide regions disposed adjacent to the reservoir region;
- one or more channel regions disposed below the reservoir region and below the one or more silicon oxide regions, the one or more channel regions comprising one or more metal oxide materials;
- and
- a diffusion control device coupled to the reservoir region and including the one or more channel regions, wherein an electric field generated by the diffusion control device controls diffusion of the ions from the reservoir region into the one or more channel regions.
3 more elements
Dependencies are inferred from the claim text.