Resistor structure in integrated circuit
AssigneeInternational Business Machines Corporation
InventorsHuimei Zhou, Baozhen Li, Chih-Chao Yang, Ashim Dutta
Life of this patent
Estimating the term…
Abstract
Embodiments of present invention provide a resistor structure. The resistor structure includes a first layer of electrically insulating material; and a second layer of resistive material directly adjacent to the first layer, wherein thermal conductivity of the first layer is equal to or larger than 100 W/m/K. In one embodiment, the first layer of electrically insulating material has a band gap equal to or larger than 4 eV and is selected from a group consisting of aluminum-nitride (AlN), boron-nitride (BN), and diamond (C).
Claims17
A resistor structure comprising:
- a first layer of electrically insulating material;
- a second layer of resistive material directly adjacent to the first layer;
- and
- a first and a second via contact in contact with the second layer of resistive material,
- wherein a thermal conductivity of the first layer is equal to or larger than 100 W/m/K;
- the second layer of resistive material has a width of about 100 nm;
- and the first via contact and the second via contact are separated by a distance of about 120 nm.
A resistor structure comprising:
- a first layer of electrically insulating material;
- a second layer of resistive material directly above and in contact with the first layer, the first layer having an area equal to or larger than that of the second layer;
- and
- a third layer of electrically insulating material directly on top of the second layer,
- wherein the first and third layers fully encompass the second layer,
- wherein the first layer of electrically insulating material has a thickness of at least 5 nm, and wherein the second layer of resistive material has a width of about 100 nm and a thickness between about 10 nm to about 200 nm.
A method of forming a resistor structure comprising:
- forming a first layer of electrically insulating material on top of a supporting structure;
- forming a second layer of resistive material directly on top of and in contact with the first layer of electrically insulating material;
- and
- forming a first and a second via contact in contact with the second layer of resistive material,
- wherein the first layer of electrically insulating material has a thermal conductivity equal to or larger than 100 W/m/K;
- the second layer of resistive material has a width of about 100 nm;
- and the first via contact and the second via contact are separated by a distance of about 120 nm.
Dependencies are inferred from the claim text.