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US 12,717,239 B2Granted
Methods of patterning a photoresist, and related patterning systems
AssigneeLiteq B.V.
InventorsJeroen de Boeij, Mikhail Yurievich Loktev, Sylvain Misat
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Abstract
According to an exemplary embodiment of the invention, a method of patterning a photoresist is provided. The method includes selectively illuminating an edge portion of a photoresist using an illumination system to form a patterned portion of the photoresist.
Claims32
A method of patterning a photoresist, the method comprising:
- illuminating an inner portion of the photoresist to form a first patterned portion of the photoresist, the first patterned portion corresponding to an active area of a semiconductor element configured to be used for one or more semiconductor devices for the semiconductor element;
- and
- selectively illuminating an edge portion of a photoresist using an illumination system to form a second patterned portion of the photoresist, the second patterned portion corresponding to an inactive area of the semiconductor element configured not to be used for one or more semiconductor devices for the semiconductor element.
A method of patterning a photoresist, the method comprising:
- (a) patterning a first portion of a photoresist to form a first patterned portion of the photoresist, the first patterned portion corresponding to an active area of a semiconductor element configured to be used for one or more semiconductor devices for the semiconductor element;
- and
- (b) selectively illuminating a second portion of the photoresist using an illumination system to form a second patterned portion of the photoresist, the second patterned portion corresponding to an inactive area of the semiconductor element configured not to be used for one or more semiconductor devices for the semiconductor element.
A method of patterning a photoresist, the method comprising:
- (a) patterning a first portion of the photoresist to form a first patterned portion of the photoresist, the first patterned portion including first patterned features having a dimension of less than 10 microns, the first patterned portion corresponding to an active area of a semiconductor element configured to be used for one or more semiconductor devices for the semiconductor element;
- and
- (b) selectively illuminating a second portion of the photoresist using an illumination system to form a second patterned portion of the photoresist, the second patterned portion including second patterned features having a dimension of greater than 10 microns, the second patterned portion corresponding to an inactive area of the semiconductor element configured not to be used for one or more semiconductor devices for the semiconductor element.
Dependencies are inferred from the claim text.