Method for processing a semiconductor wafer and semiconductor composite structure

A method for processing a semiconductor wafer, the method comprising:

• reducing a thickness of the semiconductor wafer;
• before or after reducing the thickness of the semiconductor wafer, placing a carrier structure at a first side of the semiconductor wafer;
• and
• after reducing the thickness of the semiconductor wafer, providing a support structure at a second side of the semiconductor wafer opposite to the first side,
• wherein reducing the thickness of the semiconductor wafer comprises thinning the semiconductor wafer by at least one of grinding, laser ablation, etching the semiconductor wafer, and splitting the semiconductor wafer along a splitting region,
• wherein the splitting region comprises a splitting layer comprising at least one of silicon germanium, silicon oxide, graphite, molybdenum and silicon nitride, or the splitting region is a region of porous semiconductor material and/or a region comprising voids.