Semiconductor device and method of manufacturing a semiconductor device

Abstract

A semiconductor device is provided. The semiconductor device includes a substrate and an isolation region at a first main surface of the substrate. The isolation region includes a lower portion and an upper portion that protrudes from the lower portion. The semiconductor device further includes a charge shielding layer over at least a part of the upper portion of the isolation region. An edge of the charge shielding layer has a sidewall which slopes inward at a first angle of equal to or less than 50 degrees. The semiconductor device further includes a metal barrier layer over at least a part of the charge shielding layer and over at least a part of the lower portion of the isolation region. A method of manufacturing the semiconductor device is also described.

Dependencies are inferred from the claim text.