Method for variably adjusting the electrical insulating properties of varistor-containing materials
AssigneeSusonity Commercial GmbH
InventorsJohann Bauer, Tanja Delp
Life of this patent
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Abstract
The present invention relates to a process for the variable adjustment of the electrical insulation properties of varistor-containing composite materials with the aid of defined filler mixtures, to the use of such filler mixtures, and to composite materials having resistive and capacitive field-control properties comprising filler mixtures of this type.
Claims21
A process for the variable adjustment of the electrical insulation properties of varistor-containing composite materials, comprising providing one or more mass unit(s) of a dielectric polymer material and adding a particulate microvaristor filler A having an average particle size d50 of from 1 to 150 μm and a further particulate filler B in a predefined total mass A+B to each of the one or more mass unit(s), where the particulate filler B either has a lower electrical conductivity than the particulate microvaristor filler A or where the particulate filler B is a semiconductive particulate material having a higher electrical conductivity than that of the particulate microvaristor filler A, and where a mass ratio A:
- B is in the range of from 1:99 to 99:1, and wherein the mass ratio A:B is set differently in different mass units of the polymer material in the total mass A+B, wherein the particulate microvaristor filler A is a filler which consists of support particles and a coating surrounding each of the support particles, where the support particles comprise at least one aluminium compound or silicon compound, and where the coating comprises a titanium dioxide doped with niobium and at least one further element.
A method for the variable adjustment of the electrical insulation properties of varistor-containing composite materials, the method comprising adding a filler mixture to one or more mass units of a dielectric polymer material, wherein the filler mixture consists of a predefined total mass A+B comprising a particulate microvaristor filler A having an average particle size d50 of from 1 to 150 μm and a further particulate filler B, where the particulate filler B either has a lower electrical conductivity than the particulate microvaristor filler A or where the particulate filler B is a semiconductive particulate material having a higher electrical conductivity than the particulate microvaristor filler A, and where a mass ratio A:B is in the range of from 1:99 to 99:1 exists in the total mass A+B, and the mass ratio A:B is set identically or differently from one another in each of the one or more mass unit(s);
- wherein at least one of the following conditions apply:
- the particulate microvaristor filler A is a filler which consists of support particles and a coating surrounding each of the support particles, where the support particles comprise at least one aluminium compound or silicon compound, and where the coating comprises a titanium dioxide doped with niobium and at least one further element;
- and/or
- the particulate filler B is the semiconductive particulate material which has a higher electrical conductivity than the particulate microvaristor filler A and has a specific powder resistance in the range of from 108 to 1012 ohm*cm.
A varistor-containing composite material having resistive and capacitive field-control properties, comprising mass units of a dielectric polymer material, a particulate microvaristor filler A having an average particle size d50 of from 1 to 150 μm and a further particulate filler B in a predefined total mass A+B in each mass unit of the dielectric polymer material, where the particulate filler B has a lower electrical conductivity than the particulate microvaristor filler A or where the particulate filler B is a semiconductive particulate material having a higher conductivity than the particulate microvaristor filler A, and where the same mass ratio A:B exists in each of the mass units of the polymer material that comprise the particulate fillers A+B and the mass ratio A:B is in the range of from 1:99 to 99:1;
- wherein at least one of the following conditions apply:
- the particulate microvaristor filler A is a filler which consists of support particles and a coating surrounding each of the support particles, where the support particles comprise at least one aluminium compound or silicon compound, and where the coating comprises a titanium dioxide doped with niobium and at least one further element;
- and/or
- particulate filler B is the semiconductive particulate material which has a higher electrical conductivity than the particulate microvaristor filler A and has a specific powder resistance in the range of from 108 to 1012 ohm*cm.
A process for the variable adjustment of the electrical insulation properties of varistor-containing composite materials, comprising providing one or more mass unit(s) of a dielectric polymer material and adding a particulate microvaristor filler A having an average particle size d50 of from 1 to 150 μm and a further particulate filler B in a predefined total mass A+B to each of the one or more mass unit(s), where the particulate filler B either has a lower electrical conductivity than the particulate microvaristor filler A or where the particulate filler B is a semiconductive particulate material having a higher electrical conductivity than that of the particulate microvaristor filler A, and where a mass ratio A:B is in the range of from 1:99 to 99:1, and wherein the mass ratio A:B is set differently in different mass units of the polymer material in the total mass A+B, wherein the total mass A+B is in the range of from 5 to 35% by weight, based on the total weight of a mass unit of the dielectric polymer material including the total mass A+B of the particulate fillers A and B.
Dependencies are inferred from the claim text.