Silicon carbide single crystal and manufacturing method of silicon carbide single crystal
AssigneesDenso Corporation, Toyota Jidosha Kabushiki Kaisha, MIRISE Technologies Corporation
InventorsNobuyuki Oya, Takeshi Okamoto, Akiyoshi Horiai
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Abstract
A silicon carbide single crystal includes a region in which a change of a specific resistance is repeated in a growth direction of the silicon carbide single crystal, and the change of the specific resistance is a gradual increase and decrease of the specific resistance. A changing range of the specific resistance may be within a range from 0.5% to 50% inclusive. A changing period of the gradual increase and decrease of the specific resistance that is repeated may be 500 μm or less in terms of a length of the silicon carbide single crystal.
Claims9
A silicon carbide single crystal comprising a region in which a change of a specific resistance is repeated in a growth direction of the silicon carbide single crystal, wherein the change of the specific resistance is a gradual increase and decrease of the specific resistance, and a changing period of the gradual increase and decrease of the specific resistance that is repeated is 500 μm or less in terms of a length of the silicon carbide single crystal.
A manufacturing method of a silicon carbide single crystal, comprising:
- disposing a pedestal in a crucible having a hollow portion constituting a reaction chamber, and disposing a seed crystal for growing the silicon carbide single crystal on a surface of the pedestal;
- and
- growing the silicon carbide single crystal on a surface of the seed crystal by supplying a raw material gas of silicon carbide, a carrier gas, and a dopant gas containing a dopant from below the pedestal, heating and decomposing the raw material gas, and supplying the raw material gas that is decomposed to the seed crystal, wherein
- the growing the silicon carbide single crystal is performed so that a change of a specific resistance is repeated with respect to a growth direction of the silicon carbide single crystal, the change of the specific resistance is a gradual increase and decrease of the specific resistance, and a changing period of the gradual increase and decrease of the specific resistance that is repeated is 500 μm or less in terms of a length of the silicon carbide single crystal.
Dependencies are inferred from the claim text.