US 12,707,913 B2 · Apparatus and method for processing substrate using supercritical fluid

Abstract

A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids. The substrate processing method comprises performing a supercritical process by repeating a first step, a first vent step, a second step, and a second vent step a plurality of times in order, supplying, in the first step, a first process fluid containing a precursor and a first supercritical fluid to a reactor so that a pressure of the reactor repeats rise and fall within a first pressure range a plurality of times, venting, in the first vent step, the reactor to lower the pressure of the reactor below the first pressure range, supplying, in the second step, a second process fluid containing a reducing fluid to the reactor so that the pressure of the reactor repeats rise and fall within a second pressure range different from the first pressure range a plurality of times, venting, in the second vent step, the reactor to lower the pressure of the reactor below the second pressure range.

Claims14

Dependent claims

A method for processing a substrate comprising:

supplying an aging fluid containing carbon dioxide to a reactor to raise a pressure of the reactor to a first aging pressure higher than a critical pressure of carbon dioxide,
subsequently, venting the reactor to lower the pressure of the reactor to a second aging pressure higher than the critical pressure of carbon dioxide,
subsequently, supplying a first process fluid containing a metal precursor and carbon dioxide to the reactor so that the pressure of the reactor repeats rise and fall within a first pressure range a plurality of times, the first pressure range higher than the critical pressure of carbon dioxide,
subsequently, venting the reactor to lower the pressure of the reactor below the first pressure range,
subsequently, supplying a second process fluid containing hydrogen to the reactor so that the pressure of the reactor repeats rise and fall within a second pressure range a plurality of times, and
subsequently, a venting the reactor to lower the pressure of the reactor below the second pressure range,
wherein the second pressure range is less than the critical pressure of carbon dioxide.

4 more elements

Dependencies are inferred from the claim text.

Apparatus and method for processing substrate using supercritical fluid

Life of this patent

Apparatus and method for processing substrate using supercritical fluid

Life of this patent

Abstract

Claims14