Thin film resistor

A structure, comprising:

• a substrate;
• a first intermetal dielectric (IMD) layer over the substrate;
• a resistor disposed over the first IMD layer and comprising at least two resistor layers;
• a dummy resistor disposed over the first IMD layer and comprising the at least two resistor layers;
• a second IMD over the first IMD, the resistor and the dummy resistor;
• and
• a first contact via and a second contact via in direct contact the at least two resistor layers in the resistor,
• wherein, from a top view, the dummy resistor surrounds the resistor.

A method, comprising:

• depositing a first dielectric layer over a substrate;
• depositing a first resistor layer over the first dielectric layer such that the first resistor layer interfaces a top surface of the first dielectric layer;
• depositing a second resistor layer over the first resistor layer such that the second resistor layer interfaces a top surface of the first resistor layer;
• depositing a third resistor layer over the second resistor layer;
• after the depositing of the third resistor layer, patterning the first resistor layer, the second resistor layer and the third resistor layer to form a resistor on the first dielectric layer;
• and
• depositing a second dielectric layer over the resistor and the first dielectric layer,
• wherein the first resistor layer, the second resistor layer, and the third resistor layer comprise a metal-containing conductive material.