Metasurface device, manufacturing method thereof, antenna and communication device

A metasurface device, comprising:

• a substrate, and a metal layer on the substrate and having a plurality of openings therein;
• and
• a plurality of phase control structures on a side of the metal layer away from the substrate, and in one-to-one correspondence with the plurality of openings;
• and
• wherein each of the plurality of phase control structures comprises a baffle and at least one micro-mechanical driver, the baffle is connected to the at least one micro-mechanical driver, which is configured to actuate the baffle to shield a corresponding opening in response to a received signal, wherein the baffle comprises:
• a hollow-out groove;
• wherein when the baffle is located at an initial position, an orthographic projection of the hollow-out groove on the substrate completely covers an orthographic projection of the corresponding opening on the substrate;
• and
• a shielding structure capable of effectively shielding the corresponding opening, wherein the shielding structure and the hollow-out groove are arranged side by side in a moving direction of the baffle.

A method for manufacturing a metasurface device, comprising:

• providing a substrate;
• forming a metal layer having a plurality of openings therein on one side of the substrate;
• and
• forming a plurality of phase control structures on a side of the metal layer away from the substrate, wherein the plurality of phase control structures are in one-to-one correspondence with the plurality of openings;
• each of the plurality of phase control structures comprises a baffle and at least one micro-mechanical driver, the baffle is connected to the at least one micro-mechanical driver, which drives the baffle to shield a corresponding opening based on a received shielding signal;
• wherein the forming the metal layer having the plurality of openings therein on one side of the substrate comprises:
• forming a transition layer on one side of the substrate to increase adhesion of the metal layer;
• forming an original metal layer on a side of the transition layer away from the substrate by sputtering;
• and
• forming the plurality of openings in the original metal layer to obtain the metal layer with the plurality of openings.