Low temperature substrate bonding method

A method for manufacturing a semiconductor structure, comprising:

• forming a first bonding layer on a first substrate, where the first bonding layer includes a first metal oxide material in an amorphous state;
• annealing the first bonding layer using a laser source, so as to convert the first metal oxide material from the amorphous state to a crystalline state;
• forming a second bonding layer on a second substrate, where the second bonding layer includes a second metal oxide material in an amorphous state;
• annealing the second bonding layer using a heat source, so as to convert the second metal oxide material from the amorphous state to a crystalline state;
• forming a third bonding layer on the first bonding layer, where the third bonding layer includes a third metal oxide material in an amorphous state;
• forming a fourth bonding layer on the second bonding layer, where the fourth bonding layer includes a fourth metal oxide material in an amorphous state;
• bonding the first substrate and the second substrate to each other through the first bonding layer, the second bonding layer, the third bonding layer and the fourth bonding layer;
• and
• annealing the third bonding layer and the fourth bonding layer using a heat source, so as to convert the third metal oxide material and the fourth metal oxide material from the amorphous state to a crystalline state.

A method for manufacturing a semiconductor structure, comprising:

• forming a first bonding layer on a first substrate, where the first bonding layer includes a first metal oxide material in an amorphous state;
• forming a second bonding layer on a second substrate, where the second bonding layer includes a second metal oxide material in an amorphous state;
• annealing the first bonding layer and the second bonding layer so as to convert the first metal oxide material and the second metal oxide material from the amorphous state to a crystalline state, where at least one of the first substrate or the second substrate is formed with a semiconductor device, and at least one of the first bonding layer or the second bonding layer that is disposed on the at least one of the first substrate or the second substrate is annealed using a laser source;
• forming a third bonding layer on the first bonding layer, where the third bonding layer includes a third metal oxide material in an amorphous state;
• forming a fourth bonding layer on the second bonding layer, where the fourth bonding layer includes a fourth metal oxide material in an amorphous state;
• bonding the first substrate and the second substrate to each other through the first bonding layer, the second bonding layer, the third bonding layer and the fourth bonding layer;
• and
• annealing the third bonding layer and the fourth bonding layer using a heat source, so as to convert the third metal oxide material and the fourth metal oxide material from the amorphous state to a crystalline state.