An electronic design automation method for generating a millimeter-wave capable RF switch, comprising:
- accepting input specifying whether a receive signal or a transmit signal is selected the priority signal for optimization, the unselected signal being the non-priority signal, wherein both the receive and transmit signals are millimeter waves;
- accepting input specifying the transmit signal selected for the priority signal;
- accepting input specifying a first power level for the receive signal and a second power level for the transmit signal;
- accepting input specifying a first semiconductor process for implementation of the millimeter-wave capable RF switch;
- accepting input specifying a first impedance level for the transmission lines of the millimeter-wave capable RF switch;
- determining a first shunt stack peak voltage, across an off first shunt stack, and a first pass-through stack peak voltage, across an off first pass-through stack, for when the millimeter-wave capable RF switch is in transmission mode, wherein a second port of the first pass-through stack, the first shunt stack, a common port and a first selectable port are connected to a second node;
- determining the first shunt stack peak voltage, and the first pass-through stack peak voltage, with use of the second power level and the first impedance level;
- determining a first shunt stack number of series field effect transistors needed for the first shunt stack peak voltage;
- determining a first pass-through stack number of series field effect transistors needed for the first pass-through stack peak voltage, wherein the first shunt stack number of series field effect transistors, and the first pass-through stack number of series field effect transistors are determined with use of a standoff voltage of a field effect transistor for the first semiconductor process;
- determining a second shunt stack peak voltage, across an off second shunt stack, for when the millimeter-wave capable RF switch is in receive mode, wherein a first port of the first pass-through stack, the second shunt stack, and a second selectable port are connected to a first node;
- determining a second shunt stack number of series field effect transistors needed for the second shunt stack peak voltage;
- determining a necessary second shunt stack channel width, when the second shunt stack is on, in transmission mode for the millimeter-wave capable RF switch;
- determining a necessary first shunt stack channel width, when the first shunt stack is on, and first pass-through stack channel width, when the first pass-through stack is on, in receive mode for the millimeter-wave capable RF switch is in receive mode;
- and
- outputting the produced design for the millimeter-wave capable RF switch.