Mask plate, alignment mark and photolithography system
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorsWei Hua Sang, Shi Jie Wu, Bin Xing
Life of this patent
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Abstract
A mask plate, an alignment mark and a photolithography system are provided. In one form, an alignment mark includes a plurality of alignment patterns arranged at intervals, where the alignment pattern includes a first pattern extending in a first direction and a second pattern extending in a second direction, the first pattern includes a first end and a second end which are opposite to each other in the first direction, the second pattern includes a third end and a fourth end which are opposite to each other in the second direction, the second end is connected to the third end, the fourth end is connected to the first end, and the alignment pattern is a two-dimensional linear pattern.
Claims10
A mask plate, comprising:
- a device mask pattern configured for forming a device pattern;
- and
- an alignment mask pattern configured for forming an alignment mark, wherein the alignment mask pattern comprises a plurality of combined patterns arranged at intervals, wherein the combined pattern comprises a first mask sub-pattern extending in a first direction and a second mask sub-pattern extending in a second direction, a size of the first mask sub-pattern in the second direction is 50 nm to 300 nm and is the same as a size of the second mask sub-pattern in the first direction.
An alignment mark, comprising:
- a plurality of alignment patterns arranged at intervals, wherein the alignment pattern comprises a first pattern extending in a first direction and a second pattern extending in a second direction, wherein a size of the first pattern in the second direction is 50 nm to 300 nm and is the same as a size of the second pattern in the first direction;
- wherein the first pattern and the second pattern are alternately connected in sequence;
- and
- wherein the first pattern comprises a first end and a second end which are opposite to each other in the first direction, the second pattern comprises a third end and a fourth end which are opposite to each other in the second direction, the second end is connected to the third end, and the fourth end is connected to the first end.
Dependencies are inferred from the claim text.