Photomask and manufacturing method of semiconductor device

A photomask, comprising:

• a plurality of main patterns;
• a plurality of first sub-resolution patterns disposed aside the plurality of main patterns;
• and
• a plurality of second sub-resolution patterns disposed between and connected to adjacent two of the plurality of first sub-resolution patterns,
• wherein the main patterns extend along a first direction and have end portions, the first sub-resolution patterns and the second sub-resolution patterns are separated from the main patterns, the first sub-resolution patterns extend along the first direction and beyond the end portions, a length of an excess portion of the first sub-resolution pattern extended along the first direction is a first distance, the second sub-resolution patterns extend along a second direction perpendicular to the first direction and beyond the end portions, a length of an excess portion of the second sub-resolution pattern extended along the first direction is a second distance, and the first distance is different from the second distance.