Methods for producing n-doped graphene films
AssigneeThe Research Foundation for The State University of New York
InventorsMatthew Eisaman, Jan Folkson, Joseph Andrade
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Abstract
Provided are methods for producing n-doped graphene films. The method comprises contacting a graphene layer with an alkali metal-doped polymer layer. Compositions comprising (i) a substrate, (ii) a doped polymer, and (iii) graphene are also provided. The methods of the invention produce n-doped graphene films that are resistant to degradation, have high electrical conductivity, and low sheet resistance without altering the optical transmission of graphene.
Claims42
A method for producing an n-doped graphene film on a substrate wherein the method comprises:
- (i) preparing a doped polymer solution free of graphene, the doped polymer solution comprising an alkali metal salt, a polymer and a solvent;
- (ii) coating a surface of a substrate with the doped polymer solution to form a coated substrate;
- and
- (iii) contacting an intrinsic graphene layer with the coated substrate to dope the intrinsic graphene layer, thereby producing the n-doped graphene film.
A method for producing an n-doped graphene film on a substrate wherein the method comprises:
- (i) preparing a doped polymer solution free of graphene, the doped polymer solution comprising an alkali metal salt, a polymer and a solvent;
- (ii) coating an intrinsic graphene layer with the doped polymer solution to form a coated graphene layer;
- (iii) coating a surface of a substrate with the doped polymer solution to form a coated substrate;
- and
- (iv) contacting the coated graphene layer with the coated substrate to dope the intrinsic graphene layer, thereby producing the n-doped graphene film.
Dependencies are inferred from the claim text.