Method of wafer dicing and manufacturing method of semiconductor devices using the same

A method of manufacturing a semiconductor device, the method comprising:

• forming a plurality of semiconductor devices in a plurality of device formation regions of a wafer having a scribe lane region defining the plurality of device formation regions;
• irradiating a first laser beam and a second laser beam along the scribe lane region to form a plurality of horizontally spaced apart internal cracks in the wafer,
• wherein the first laser beam is pulsed wave light having a wavelength in a range of about 800 Nanometer (nm) to about 1200 nm and comprises a plurality of pulses, and the second laser beam is continuous wave light having a wavelength in a range of about 1400 nm to about 2000 nm;
• separating the plurality of semiconductor devices along the plurality of internal cracks;
• and
• packaging each of the plurality of separated semiconductor devices.

A method of manufacturing a semiconductor device, the method comprising:

• preparing a wafer having a plurality of device formation regions and a scribe lane region defining the plurality of device formation regions;
• forming a plurality of semiconductor devices in a plurality of device formation regions of the wafer having a scribe lane region defining the plurality of device formation regions;
• irradiating a first laser beam and a second laser beam along the scribe lane region to form a plurality of horizontally spaced apart internal cracks in the wafer,
• wherein the first laser beam is pulsed wave light having a wavelength in a range of about 800 Nanometer (nm) to about 1200 nm and comprises a plurality of pulses, and the second laser beam is continuous wave light having a wavelength in a range of about 1400 nm to about 2000 nm;
• separating the plurality of semiconductor devices along the plurality of internal cracks;
• and
• packaging each of the plurality of separated semiconductor devices,
• wherein the first laser beam is irradiated so as to be focused on a focusing point that is one point of the scribe lane region, and
• the second laser beam is not focused on the focusing point but is irradiated along the scribe lane region prior to the plurality of pulses of the first laser beam.