2-bit high-power amplifying non-reciprocal reflective metasurface

A 2-bit high-power amplifying non-reciprocal reflective metasurface, comprising a plurality of metasurface units distributed in an array, wherein each of the plurality of metasurface units comprises a first metal layer, an intermediate layer, and a second metal layer, wherein the first metal layer, the intermediate layer, and the second metal layer are sequentially stacked, wherein

• the second metal layer comprises a receiving metal patch and a transmitting metal patch;
• two diodes are disposed on the receiving metal patch, and the two diodes are both positioned on a longitudinal central axis of the receiving metal patch;
• slots are formed on both the transmitting metal patch and the receiving metal patch, and orientation of the slot on the transmitting metal patch is orthogonal to orientation of the slot on the receiving metal patch;
• the first metal layer comprises a phase shifter, wherein the phase shifter comprises first series diodes and second series diodes;
• the first series diodes and the second series diodes each comprise two diodes in series, and the first series diodes are connected in parallel at both ends of the second series diodes;
• the first series diodes and the second series diodes form a reconfigurable 90-degree phase-shift circuit;
• by adjustment of states of the diodes on the receiving metal patch and states of the first series diodes and the second series diodes in the phase shifter, electromagnetic wave phase achieves 2 bits, wherein four independent regulation and control capabilities are allowed;
• each of the plurality of metasurface units further comprises a power amplifier arranged on the first metal layer, wherein a first end of the power amplifier is connected to the phase shifter, and a second end of the power amplifier is connected to the transmitting metal patch by plated through-holes.