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AssigneesSamsung Electronics Co., Ltd., Inha University Research and Business Foundation
InventorsJin-Kyun Lee, Chawon Koh, Ye-Jin Ku, Tsunehiro Nishi, Hyunwoo Kim, Hyung-Ju Ahn
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A resist material is combined with a ligand containing four or more fluorine atoms and is represented by the following formula: [(R1M)iOjXk(OH)m] (OH)nR2p, wherein one of “R1” and “R2” is CaFbHc, CaFbHcNd, CaFbHcPd, CaFbHcSd, CaFbHcOd, CaFbHcNdSe, CaFbHcPdSe, CaFbHcNdOe, or CaFbHcPdOe, the other of “R1” and “R2” is CaHc, CaFbHc, CaFbHcNd, CaFbHcPd, CaFbHcSd, CaFbHcOd, CaFbHcNdSe, CaFbHcPdSe, CaFbHcNdOe, or CaFbHcPdOe, “a” and “c” are each independently an integer of 0 to 20, “b” is an integer of 4 to 30, “d” and “e” are each independently an integer of 0 to 5, “M” is one metal selected from a specified list, “i” is an integer from 1 to 12, “j” is an integer of 1 to 14, “X” is a halogen selected from a specified list, “k” and “m” are each independently an integer of 0 to 6, and “n” and “p” are each independently an integer of 0 to 2.
An organometallic compound comprising a metal combined with at least one ligand comprising four or more fluorine atoms, wherein the organometallic compound has one structure selected from the following Chemical Formulas 2 to 5:
A resist composition comprising:
A method of fabricating a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.