Purge system to clean wafer backside for ring susceptor
AssigneeApplied Materials, Inc.
InventorAniketnitin Patil
Life of this patent
Estimating the term…
Abstract
A method and apparatus for processing substrates applicable for use in semiconductor manufacturing. The method includes rotating a first shaft having a first perforation where at least a part of the first shaft is disposed within a second shaft. The method further includes flowing a gas through a piping, where the piping is coupled to a second perforation in the second shaft. The method also includes flowing the gas through the second perforation and the first perforation into an interior of the first shaft. The method further includes flowing the gas from the interior of the first shaft to an underside of a substrate disposed within a processing chamber.
Claims20
An apparatus applicable for use in semiconductor manufacturing, comprising:
- a first shaft having a first perforation;
- a second shaft having a second perforation, wherein at least a portion of the first shaft is disposed inside of the second shaft and the first shaft is rotatable with respect to the second shaft;
- a support frame coupled to an end of the first shaft, the support frame comprising a plurality of arms;
- and
- a cassette disposed above the support frame, the plurality of arms being coupled to the cassette to support the cassette such that lifting and lowering the support frame lifts and lowers the cassette, wherein the first perforation and the second perforation are configured to allow passage of a gas through the first perforation and the second perforation when the first shaft is rotated, wherein the first shaft is configured such that the gas is flowable through an interior of the first shaft to contact an underside of a substrate disposed on the cassette.
A method of processing substrates applicable for use in semiconductor manufacturing, comprising:
- rotating a first shaft having a first perforation wherein at least a part of the first shaft is disposed within a second shaft, wherein a support frame coupled to an end of the first shaft, the support frame comprising a plurality of arms and a cassette disposed above the support frame, the plurality of arms being coupled to the cassette to support the cassette such that lifting and lowering the support frame lifts and lowers the cassette;
- flowing a gas through a piping, wherein the piping is coupled to a second perforation in the second shaft;
- flowing the gas through the second perforation and the first perforation into an interior of the first shaft;
- and
- flowing the gas from the interior of the first shaft to an underside of a substrate disposed within a processing chamber.
A method of processing substrates applicable for use in semiconductor manufacturing, comprising:
- heating a substrate positioned above a substrate support;
- flowing one or more process gases over the substrate to form one or more layers on the substrate;
- rotating a first shaft having a first perforation wherein at least a part of the first shaft is disposed within a second shaft, wherein a support frame coupled to an end of the first shaft, the support frame comprising a plurality of arms and a cassette disposed above the support frame, the plurality of arms being coupled to the cassette to support the cassette such that lifting and lowering the support frame lifts and lowers the cassette;
- flowing a cleaning gas through a connection, wherein the connection is coupled to a second perforation in the second shaft;
- flowing the cleaning gas through the second perforation and the first perforation into an interior of the first shaft;
- and
- flowing the cleaning gas from the interior of the first shaft to an underside of a substrate disposed within a processing chamber.
Dependencies are inferred from the claim text.