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US 12,690,205 B2Granted
Resonant tunneling diode, oscillator and detection system
AssigneeCanon Kabushiki Kaisha
InventorTatsuro Uchida
Life of this patent
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Abstract
A resonant tunneling diode includes a substrate, and a mesa structure including a compound semiconductor layer including a heterojunction comprising a multi-barrier structure disposed on the substrate, and an electrode disposed on the upper surface of the compound semiconductor layer. An outer edge portion of the compound semiconductor layer is a first region including crystal defects, and the first region and the electrode are set apart from each other.
Claims15
A resonant tunneling diode comprising:
- a substrate;
- a mesa structure including a compound semiconductor layer including a heterojunction comprising a multi-barrier structure disposed on the substrate;
- an electrode disposed on an upper surface of the compound semiconductor layer, and configured to contact the upper surface of the compound semiconductor layer;
- and
- a dielectric film,
- wherein an outer edge portion of the compound semiconductor layer is a first region including crystal defects,
- wherein the first region and the electrode are set apart from each other, and
- wherein the dielectric film covers an area ranging from at least a part of the first region to at least a part of the electrode, and covers an upper surface of the part of the electrode.
5 more elements
Dependencies are inferred from the claim text.