System, software application, and method for dose uniformity improvement

A lithography system, comprising:

• a circular projection unit, wherein a size of the circular projection unit is adjustable to change a distribution of incidence angles corresponding to one or more incident lights;
• a phase shifting mask positioned spaced apart from the circular projection unit in a projection direction and having a mask pattern corresponding to a device pattern;
• and
• a circular illumination phase shifting lens spaced apart from the phase shifting mask in the projection direction;
• and
• wherein the phase shifting mask forms the one or more incident lights having a corresponding swing curve from a write beam projected from the circular projection unit, and wherein the one or more incident lights are focused by the circular illumination phase shifting lens to reduce a total swing curve of the incident lights to develop a photoresist layer on a substrate with a photoresist pattern corresponding to the device pattern.

A lithography system, comprising:

• a dipole projection unit, wherein the size of the dipole projection unit is adjustable to change a distribution of incidence angles corresponding to one or more incident lights;
• a dipole illumination phase shifting mask positioned spaced apart from the dipole projection unit in a projection direction and having a mask pattern corresponding to a device pattern;
• and
• a dipole phase shifting lens spaced apart from the dipole illumination phase shifting mask in the projection direction;
• and
• wherein the dipole illumination phase shifting mask forms the one or more incident lights having a corresponding swing curve from a write beam projected from the dipole projection unit, and wherein the one or more incident lights are focused by the dipole phase shifting lens to reduce a total swing curve of the incident lights to develop a photoresist layer on a substrate with a photoresist pattern corresponding to the device pattern.