Gas-based development of organometallic resist in an oxidizing halogen-donating environment

Abstract

A method provides for performing a dry development of an organotin composition patterned with radiation and having a latent image. The method comprises developing a structure with a gas comprising a halogen based developer and an oxygen source compound, wherein the structure comprises a substrate with layer of composition with a latent image with regions with at least partially condensed tin oxide-hydroxide and separate regions with an organotin composition having carbon-tin bonds, and wherein the developing results in at least partial removal of the organotin composition having carbon-tin bonds. Contact with an oxidizing environment can be performed as a separate step followed by the halogen based thermal development. Suitable apparatuses provide for the desired processing.

Dependencies are inferred from the claim text.